STPSC30H12C

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製品概要

概要

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V_F Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

特徴
No or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

Operating T_j from -40 °C to 175 °C

ECOPACK^®2 compliant
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

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	Resource title	バージョン	Latest update

SPICE models (1)

	Resource title	バージョン	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0