STPSC40G12
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1200 V, 40 A High surge Silicon Carbide Power Schottky Diode

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Product overview

概要

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • None or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -55 °C to 175 °C
    • Avalanche energy rated
    • ECOPACK2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC40G12

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STPSC40G12WL
Active
DO247 LONG LEADS Industrial Ecopack2 - -

STPSC40G12WL

Package:

DO247 LONG LEADS

Material Declaration**:

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Marketing Status

Active

Package

DO247 LONG LEADS

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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STPSC40G12WL

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STPSC40G12WL Active

Budgetary Price (US$)*/Qty:
-
Package:
Packing Type:
RoHS:
Country of Origin:
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ECCN (EU):

Part Number:

STPSC40G12WL

Junction Temperature (°C) (max):

175

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。