STPSC8TH13TI

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製品概要

概要

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

特徴
No or negligible reverse recovery

Switching behavior independent of temperature

Suited for specific bridge-less topologies

High forward surge capability

Insulated package:

Capacitance: 7 pF

Insulated voltage: 2500 V rms
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

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	Resource title	バージョン	Latest update

SPICE models (1)

	Resource title	バージョン	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0