M95M01-A150
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Automotive 1024 Kbit SPI bus EEPROM with high speed clock

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製品概要

概要

The M95M01-A125, M95M01-A145 and M95M01-A150 are 1‑Mbit serial electrically erasable programmable memory (EEPROM) automotive-grade devices. Those manufactured in CMOSF8H operate up to +145°C, while those manufactured in CMOSF9V operate up to +150°C. They are qualified with the high reliability automotive standard AEC-Q100 grade 0, and are accessed through a simple serial SPI-compatible interface running at up to 16 MHz. Moreover,the devices manufactured in CMOSF9V follow the ASIL-B ready requirement.

The devices are byte-alterable memories (131072 × 8 bits), organized as 512 pages of 256 bytes, in which the data integrity is significantly improved thanks to an embedded error correction code logic.

The M95M01-A125, M95M01-A145 and M95M01-A150 offer an additional identification page (256 bytes), where the ST device identification can be read. This page can also store sensitive application parameters, which can later be permanently locked in read-only mode.

  • 機能一覧

    • Functional safety
      • Follows ASIL-B ready requirement
    • Grade
      • AEC-Q100 grade 0 conform qualification
    • SPI interface
      • Compatible with the serial peripheral interface (SPI) bus
    • Memory
      • 1-Mbit (128-Kbyte) EEPROM
      • Page size: 256 bytes
      • Additional 256-byte lockable identification page
    • Supply voltage
      • 2.5 V to 5.5 V for CMOSF8H products
      • 1.7 V to 5.5 V for CMOSF9V products
    • Temperature
      • Operating temperature range:
        • -40 °C up to +125 °C for range 3
        • -40 °C up to +145 °C for range 4 for CMOSF8H
        • -40 °C up to +150 °C for range 4 for CMOSF9V
    • Clock frequency
      • Up to 16 MHz
    • Fast write cycle time
      • Byte and page write within 5 ms (typically 4 ms) for CMOSF8H products
      • Byte and page write within 3.5 ms (typically 2.6 ms) for CMOSF9V products
    • Advanced features
      • Schmitt trigger inputs for noise filtering
      • Software write protection by quarter block
      • Hardware write protection of the whole memory array
      • Enhanced ESD/latch-up protection
      • ESD human body model 4000 V
    • Write cycle performance
      • For CMOSF8H products
        • More than 4 million write cycles at +25 °C
        • More than 1.2 million write cycles at +85 °C
        • More than 600 k write cycles at +125 °C
        • More than 400 k write cycles at +145 °C
      • For CMOSF9V products
        • More than 4 million write cycles at +25 °C
        • More than 1.2 million write cycles at +85 °C
        • More than 600 k write cycles at +125 °C
        • More than 400 k Write cycles at +150 °C
    • Data retention performance
      • 100 years at 25 °C for CMOSF8H products
      • 15 years at 45 °C for CMOSF9V products
    • Ultra-low power current consumption (for CMOSF9V commercial products)
      • 0.6 μA (typical) in standby mode
      • 650 μA (typical) for read current
      • 1 mA (typical) for write current
    • Packages
      • SO8N, TSSOP8, and WFDFPN8 (ECOPACK2-compliant)

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STMicroelectronics - M95M01-A150

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
M95M01-DWDW4TP/V
Active
TSSOP-8L Automotive Ecopack2 15 2025-04-01T00:00:00.000+02:00

M95M01-DWDW4TP/V

Package:

TSSOP-8L

Material Declaration**:

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Marketing Status

Active

Package

TSSOP-8L

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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