製品概要
概要
The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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特徴
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - 2STL1525
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