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  • This device is a high voltage fast-switching NPN power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

    主な特徴

    • High voltage capability
    • Fast switching speed

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製品型番
パッケージ
Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
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2STN2780 SOT-223 Tape And Reel
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

2STN2780

パッケージ

SOT-223

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技術文書

    • Description バージョン サイズ アクション
      DS11639
      High voltage fast switching NPN power transistor
      1.0
      670.06 KB
      PDF
      DS11639

      High voltage fast switching NPN power transistor

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
2STN2780
Active
SOT-223 インダストリアル Ecopack2

2STN2780

Package:

SOT-223

Material Declaration**:

Marketing Status

Active

Package

SOT-223

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.