製品概要
概要
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
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特徴
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - SCTHS250N120G3AG
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すべてのリソース
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
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| ZIP | 1.0 | 17 Apr 2024 | 17 Apr 2024 |