製品概要
概要
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
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特徴
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- High voltage capability
- Very high switching speed
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - ST13009
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