STI24NM65N | Product - STマイクロエレクトロニクス

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製品概要

概要

This series of devices is designed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

特徴
100% avalanche tested

Low gate input resistance

Low input capacitance and gate charge
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注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.

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STI24NM65N

生産終了

N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247

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製品概要

概要

特徴

注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

EDAシンボル / フットプリント / 3Dモデル

STI24NM65N 生産終了 Out of Production. N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247

フィルタ

Quick filters

製品概要

概要

特徴

注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

EDAシンボル / フットプリント / 3Dモデル

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STI24NM65N

生産終了

N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247