製品概要
概要
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.
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特徴
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STI400N4F6
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