製品概要
概要
This device is a 12 V N-channel STripFET™V Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).
-
特徴
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STL100N1VH5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
EDAシンボル
フットプリント
3Dモデル