製品概要
概要
The device is manufactured in NPN Planar Technology by using a \"Base Island\" layout.
The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage
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特徴
- VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE
- FAST-SWITCHING SPEED
- HIGH CURRENT GAIN CHARACTERISTIC
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STSA1805
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