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STT7P2UH7
生産終了
Design Win
P-channel 20 V, 0.0195 Ohm typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package

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製品概要

概要

This P-channel Power MOSFET utilizes the STripFET™ H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - STT7P2UH7

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