PD57045-E
Active
Design Win
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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Product overview

概要

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

  • All features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 45 W with 13dB gain @ 945 MHz / 28 V
    • New RF plastic package

EDA Symbols, Footprints and 3D Models

STMicroelectronics - PD57045-E

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
PD57045-E
Active
PowerSO-10RF (formed lead) Industrial Ecopack2 - -

PD57045-E

Package:

PowerSO-10RF (formed lead)

Material Declaration**:

Marketing Status

Active

Package

PowerSO-10RF (formed lead)

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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PD57045-E

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