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RF2L16180CB4

生産終了
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180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

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製品概要

概要

The RF2L16180CB4 is a 180 W, internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.

  • 特徴

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Optimized for Doherty applications
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

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STマイクロエレクトロニクス - RF2L16180CB4

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