Optimum trade-off between conduction and switching loss
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. SCTWA60N120G2-4 features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Key features
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Application examples
Switching mode power supply 
DC-DC converters 
Industrial motor control Recommended resources
Silicon carbide technology enables higher power density in Industrial and Automotive applications
A user-friendly product selector ensuring a smooth and simple navigation experience and includes a parametric search engine that lets you rapidly identify the right product that best fits your application. Available on Google Play, App Store and Wandoujia.
Discover ST's portfolio of discrete and integrated power semiconductors as well as application guidelines and designer resources.
