STPSC10065

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製品概要

概要

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

特徴
No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating T_j from -40 °C to 175 °C

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant component
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

Watch the video (10:21)

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	Resource title	バージョン	Latest update

SPICE models (1)

	Resource title	バージョン	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0