製品概要
概要
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
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特徴
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
- ECOPACK2 compliant component
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STPSC10065
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すべてのリソース
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
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| ZIP | 12.0 | 05 Dec 2025 | 05 Dec 2025 |
SIMPLIS models (1)
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| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |