製品概要
概要
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
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特徴
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Particularly suitable in PFC boost diode function
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STPSC2006CW
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すべてのリソース
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SPICE models (1)
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| ZIP | 12.0 | 05 Dec 2025 | 05 Dec 2025 |
SIMPLIS models (1)
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| ZIP | 1.0 | 23 May 2025 | 23 May 2025 |