The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Particularly suitable in PFC boost diode function
Recommended for you
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.