製品概要
概要
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
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All features
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCT1000N170AG
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すべてのリソース
| Resource title | Version | Latest update | Actions | Details | ダウンロード |
|---|
SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 23 May 2023 | 23 May 2023 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHSコンプライアンスグレード | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SCT1000N170AG | Active 交換品交換品 | HIP247 | Automotive | Ecopack2 | - | - |
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCT1000N170AG | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください |
SCT1000N170AG Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。