製品概要
概要
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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特徴
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - SCTH70N120G2V-7
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すべてのリソース
| タイトル | バージョン | 更新日 |
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
|---|---|---|---|---|---|
| ZIP | 2.0 | 01 Jun 2023 | 01 Jun 2023 |