Product overview
概要
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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All features
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTH70N120G2V-7
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すべてのリソース
| Resource title | Version | Latest update | Actions | Details | ダウンロード |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 2.0 | 01 Jun 2023 | 01 Jun 2023 |