製品概要

概要

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.

特徴
AEC-Q101 qualified

Gate charge minimized

100% avalanche tested

Excellent FoM (figure of merit)

Very low intrinsic capacitance
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注目ビデオ

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LV Motor Control

Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications

Watch the video (18:18)

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