製品概要
概要
These devices are IGBTs developed using an advanced proprietary trench gate field‑stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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特徴
- Maximum junction temperature: TJ = 175 °C
- High speed switching
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Soft and fast recovery antiparallel diode
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STGB20H60DF
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