製品概要

概要

This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

特徴
AEC-Q101 qualified

SCIS energy of 300 mJ @ T_J = 25 °C

Parts are 100% tested in SCIS

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

Very low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor
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注目ビデオ

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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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