IGBT 絶縁ゲートバイポーラトランジスタ

ST offers a comprehensive portfolio of IGBTs (insulated gate bipolar transistors) ranging from 300 to 1250 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies.

Offering an optimal trade-off between switching performance and on-state behavior (variant) ST’s IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers.

Our IGBTs are available as bare die as well as packaged discrete components.

ST’s IGBT main characteristics:

Best trade-off between conduction and switch-off energy losses
Max. junction temperature up to 175 °C
Wide switching frequency range
Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management

1200 V IGBT S series

Optimized for use in low-frequency (up to 8 kHz), hard-switching topologies, ST’s S series of 1200 V IGBTs feature the industry’s lowest V _CE(sat) among 1200 V IGBTs currently on the market. Based on ST’s third-generation of trench-gate field-stop technology, they increase the efficiency of power supplies, welders and industrial motor drive applications thanks to the optimal trade-off between conduction and switching performance combined with outstanding robustness and EMI characteristics. Available in 15 A, 25 A and 40 A current ratings, they feature a 175°C maximum operating junction temperature, a 10 µs min short-circuit withstand time and a wide safe operating area (SOA).

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IGBT

1200 V IGBT S series

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No availability reported, please contact our Sales office