製品概要
概要
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
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特徴
- Designed for automotive applications and AEC-Q101 qualified
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
推奨コンテンツ
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STGD20N40LZ
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EDAシンボル
フットプリント
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すべてのリソース
| タイトル | バージョン | 更新日 |
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SPICE models (2)
| タイトル | バージョン | 更新日 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 | ||
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |