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STGP10NB60SD

生産終了
Design Win
MySTに保存する

16 A, 600 V low drop IGBT with soft and fast recovery diode

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製品概要

概要

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

推奨コンテンツ

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - STGP10NB60SD

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