Product overview
Description
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).-
All features
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode
Featured Videos
Recommended for you
All tools & software
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGP10NB60SD
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGP10NB60SD | Active | 16 A, 600 V low drop IGBT with soft and fast recovery diode | TO-220 | Industrial | Ecopack2 | |
STGP10NB60SD
Package:
16 A, 600 V low drop IGBT with soft and fast recovery diodeMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGP10NB60SD | 1 distributors | Buy Direct | Active | EAR99 | NEC | Tube | TO-220 | -65 | 150 | CHINA | 16 A, 600 V low drop IGBT with soft and fast recovery diode | 1.9355 / 1k | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
