STGP10NB60SD

Obsolete
Design Win

16 A, 600 V low drop IGBT with soft and fast recovery diode

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Product overview

Description

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

  • All features

    • Low on-voltage drop (VCE(sat))
    • High current capability
    • Very soft ultra fast recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGP10NB60SD

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