STGSB200M65DF2AG

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製品概要

概要

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V_CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.

特徴
AEC-Q101 qualified

6 μs of minimum short-circuit withstand time

V_CE(sat) = 1.65 V (typ.) @ I_C = 200 A

Tight parameter distribution

Positive V_CE(sat) temperature coefficient

Low thermal resistance

Maximum junction temperature: T_J = 175 °C

Dice on direct bond copper (DBC) substrate

Isolation rating of 3400 Vrms/min

UL recognition: UL 1557 file E81734
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注目ビデオ

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1200 V IGBT M series

Optimized for hard-switching applications up to 20 kHz

Watch the video (04:34)

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	製品型番	ステータス	概要	タイプ	サプライヤ
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	Resource title	バージョン	Latest update

SPICE models (1)

	Resource title	バージョン	Latest update
ZIP	STGSB200M65DF2AG SPICE model	2.0	02 May 2022	02 May 2022 STGSB200M65DF2AG SPICE model 2.0

品質 & 信頼性

製品型番	マーケティング･ステータス	概要	パッケージ	グレード	RoHSコンプライアンスグレード	材料宣誓書**
STGSB200M65DF2AG	量産中	Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package	ACEPACK SMIT	オートモーティブ	Ecopack2