Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

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  • This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    主な特徴

    • Designed for automotive applications and AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness

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Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
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STH145N8F7-2AG H2PAK-2 Tape And Reel
Active
- EAR99 CHINA No availability of distributors reported, please contact our sales office Buy now

STH145N8F7-2AG

パッケージ

H2PAK-2

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

開発ツール・ハードウェア

    • 製品型番

      MOSFET product finder application for Android and iOS

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技術文書

    • Description バージョン サイズ アクション
      DS11081
      Automotive-grade N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H²PAK-2 package
      1.0
      671.29 KB
      PDF
      DS11081

      Automotive-grade N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H²PAK-2 package

    • Description バージョン サイズ アクション
      AN3267
      Impact of power MOSFET VGS on buck converter performance
      1.2
      1.13 MB
      PDF
      AN4789
      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance
      1.1
      1,006.7 KB
      PDF
      AN4191
      Power MOSFET: Rg impact on applications
      1.2
      1.45 MB
      PDF
      AN4390
      ST’s MOSFET technologies for uninterruptible power supplies
      1.1
      1.22 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN3267

      Impact of power MOSFET VGS on buck converter performance

      AN4789

      Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance

      AN4191

      Power MOSFET: Rg impact on applications

      AN4390

      ST’s MOSFET technologies for uninterruptible power supplies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description バージョン サイズ アクション
      AEC-Q101 STripFET F7 MOSFETs for Automotive 1.0
      714.06 KB
      PDF
      STPOWER™ STripFET F7 MOSFET for Industrial applications 1.1
      687.95 KB
      PDF

      AEC-Q101 STripFET F7 MOSFETs for Automotive

      STPOWER™ STripFET F7 MOSFET for Industrial applications

    • Description バージョン サイズ アクション
      パワー・マネージメントガイド 2017 09.2018
      2.64 MB
      PDF
      Electric vehicle (EV) ecosystem 1.1
      1.03 MB
      PDF

      パワー・マネージメントガイド 2017

      Electric vehicle (EV) ecosystem

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STH145N8F7-2AG
Active
H2PAK-2 オートモーティブ Ecopack1

STH145N8F7-2AG

Package:

H2PAK-2

Material Declaration**:

Marketing Status

Active

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.