STI14NM65N | Product - STマイクロエレクトロニクス

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製品概要

概要

This series of devices is designed using the second generation of MDmesh Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

特徴
100% avalanche tested

Low gate input resistance

Low input capacitance and gate charge
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注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.

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STI14NM65N

生産終了

N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET

フィルタ

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製品概要

概要

特徴

注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

EDAシンボル / フットプリント / 3Dモデル

STI14NM65N 生産終了 Out of Production. N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET

フィルタ

Quick filters

製品概要

概要

特徴

注目ビデオ

TO-LL leadless surface mounted packages for high-power performance

EDAシンボル / フットプリント / 3Dモデル

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STI14NM65N

生産終了

N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET