製品概要
概要
This N-channel Power MOSFET utilizes the 8th generation of STripFET™ technology with an enhanced trench gate structure for very low on-state resistance and gate charge, resulting in best in class conduction and switching performance.
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特徴
- Extremely low on-resistance RDS(on)
- Excellent figure of merit (FoM)
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STL35N3LH8
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