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This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
主な特徴
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STL3N80K5 | PowerFLAT 5x6 VHV | Tape And Reel |
Active
|
- | - | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
STL3N80K5
パッケージ
PowerFLAT 5x6 VHV梱包タイプ
Tape And ReelUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | 材料宣誓書** |
|---|---|---|---|---|---|
| STL3N80K5 |
Active
|
PowerFLAT 5x6 VHV | インダストリアル | Ecopack2 |
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STL3N80K5
Package:
PowerFLAT 5x6 VHVMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
