This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
- AEC-Q101 qualified
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
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|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 5x6 WF||オートモーティブ||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.