製品概要
概要
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
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特徴
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STL9P2UH7
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