製品概要
概要
This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications.
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特徴
- 100% avalanche tested
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STN1N20
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