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STN1N20

Obsolete
Design Win

N-Channel 200V - 1.2 Ohm - 1A - SOT-223 MESH OVERLAY(TM) MOSFET

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Product overview

Description

This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications.

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STN1N20

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