製品概要
概要
The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
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特徴
- Very low collector to emitter saturation voltage
- DC current gain, hFE>100
- 5 A continuous collector current
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STN878
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