Product overview
Description
The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
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All features
- Very low collector to emitter saturation voltage
- DC current gain, hFE>100
- 5 A continuous collector current
EDA Symbols, Footprints and 3D Models
The STMicroelectronics team - STN878
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