N-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package

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  • This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    主な特徴

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

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Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
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STP105N3LL TO-220AB Tube
Active
- EAR99 CHINA No availability of distributors reported, please contact our sales office Buy now

STP105N3LL

パッケージ

TO-220AB

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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    • Description バージョン サイズ アクション
      DS9382
      N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package
      3.0
      797.72 KB
      PDF
      DS9382

      N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package

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      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
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製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STP105N3LL
Active
TO-220AB インダストリアル Ecopack2

STP105N3LL

Package:

TO-220AB

Material Declaration**:

Marketing Status

Active

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.