製品概要
概要
This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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特徴
- RDS(on)* Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STS3P6F6
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