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STS3P6F6

Obsolete
Design Win

P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package

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Product overview

Description

This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

  • All features

    • RDS(on)* Qg industry benchmark
    • Extremely low on-resistance RDS(on)
    • High avalanche ruggedness
    • Low gate drive power losses

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STS3P6F6

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