製品概要
概要
This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.
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特徴
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
- Ultra logic level
P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package
This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.
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