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STS9P2UH7

生産終了
Design Win

P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

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製品概要

概要

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - STS9P2UH7

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Footprints

フットプリント

3D model

3Dモデル