STS9P2UH7

Obsolete
Design Win

P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

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Product overview

Description

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

  • All features

    • Very low on-resistance
    • Very low capacitance and gate charge
    • High avalanche ruggedness
    • Ultra logic level

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - STS9P2UH7

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Symbols

Symbols

Footprints

Footprints

3D model

3D models