STU2N105K5

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製品概要

概要

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

特徴
Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected
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注目ビデオ

すべてを見る

900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Watch the video (03:57)

800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

Watch the video (04:25)

600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

推奨コンテンツ

On-demand Webinar | Discover STPOWER MDmesh M6 and DM6 MOSFET technologies

All tools & software

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