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STW18N60DM2
Obsolete
Design Win
N-channel 600 V, 260 mOhm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package

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製品概要

  • 機能一覧

    • Fast-recovery body diode
    • Extremely low gate charge and input capacitance
    • Low on-resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected
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Featured Products

Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

Fast recovery diode MOSFETs

Discover the MDmesh™ DM2 Series of fast recovery diode MOSFETs (400 V - 650 V), ideal for full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies.

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW18N60DM2

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SPICE models (1)

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Version
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STW18N60DM2 PSpice model
1.0 17 Mar 2016
ZIP
17 Mar 2016
STW18N60DM2 PSpice model 1.0

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