LET9070FB

生産終了
Design Win

70W 28V HF to 2GHz LDMOS TRANSISTOR

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製品概要

概要

The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

  • 特徴

    • Excellent thermal stability
    • Common source configuration
    • POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
    • BeO free package
    • In compliance with the 2002/95/EC European directive
    • Bidirectional ESD

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - LET9070FB

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