-
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
主な特徴
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V
- New RF plastic package
評価ツール
-
-
画像 製品型番 製造元 概要 
STEVAL-TDR023V1 -- 20 W, 460 - 540 MHz evaluation board based on PD55025-E 製品型番20 W, 460 - 540 MHz evaluation board based on PD55025-E
-
