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  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V
    • New RF plastic package

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Evaluation Tools

    • Part Number

      20 W, 460 - 540 MHz evaluation board based on PD55025-E

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS4735
      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      2.1
      532.41 KB
      PDF
      DS4735

      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

    • Description Version Size Action
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      PD55025S-E ADS model 1.0
      344.95 KB
      ZIP

      PD55025S-E ADS model