ST offers a broad portfolio of RF LDMOS (lateral double-diffused metal oxide semiconductor) transistors operating from a supply voltage of 7 to 50 V. They target applications in the 1 MHz to 4 GHz frequency range and feature high peak power up (>1 kW) and high ruggedness capability.
Designed to increase the transistor's power saturation capability, minimizing the distortion at higher power levels, our latest 28V & 50V LDMOS technologies feature improved RF performance (+3 dB, +15% efficiency), ruggedness and reliability.
Target applications include:
Our PowerSO-10 plastic package is a high-power SMD package designed to offer high reliability and is specially optimized for RF needs and ease of assembly. Certain devices are also available in die form for chip-on-board (CoB) design.
In addition to a wide range of evaluation boards, ST offers several software simulators and analysis tools to help engineers quickly get their designs to market.