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RF2L42008CG2

生産終了
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8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

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製品概要

概要

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FETs, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • 特徴

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - RF2L42008CG2

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